Reliability evaluation of AlGaN/GaN HEMTs grown on SiC substrate

Author

Lee, C. ; Witkowski, L. ; Muir, M. ; Tserng, H.Q. ; Saunier, P. ; Wang, H. ; Yang, J. ; Khan, M.A.

Author_Institution

TriQuint Semicond. Texas, Richardson, TX, USA

fYear

2002

fDate

6-8 Aug. 2002

Firstpage

436

Lastpage

442

Abstract

AlGaN/GaN HEMTs have achieved record output power densities at microwave frequencies; however, reliability of these devices is still a major concern. In this paper, the results of DC and RF stress tests at several drain voltages of passivated 75 μm devices are discussed. After DC stress for 48 hours, negligible differences in IN and small signal performance were observed in some devices, while significant reduction in drain current, decrease in transconductance, and increase in on-resistance were measured in some other devices. RF stress for 40 hours has resulted in lower transconductance and drain current and degradation in power performance at 10 GHz. A comprehensive comparison of equivalent circuit models before and after stress is presented.

Keywords

III-V semiconductors; aluminium compounds; equivalent circuits; gallium compounds; high electron mobility transistors; life testing; microwave field effect transistors; microwave power transistors; semiconductor device reliability; semiconductor device testing; wide band gap semiconductors; 10 GHz; 48 h; 75 micron; AlGaN-GaN; AlGaN/GaN; DC stress tests; HEMTs; RF stress tests; drain current; drain voltages; equivalent circuit models; on-resistance; output power densities; power performance; reliability evaluation; small signal performance; transconductance; Aluminum gallium nitride; Gallium nitride; HEMTs; MODFETs; Microwave frequencies; Power generation; Radio frequency; Silicon carbide; Stress; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on

Print_ISBN

0-7803-7478-9

Type

conf

DOI

10.1109/LECHPD.2002.1146785

Filename

1146785