A 100–960MHz CMOS Ultra-wideband Low noise Amplifier

Author

Merkin, Timothy B. ; Li, Ju-Ching ; Jung, Sungyong ; Lu, Mingyu ; Gao, Jean ; Lee, Sung Chul

Author_Institution

Electr. Eng., Univ. of Texas at Arlington, Arlington, TX

fYear

2008

fDate

10-13 Aug. 2008

Firstpage

141

Lastpage

144

Abstract

This paper presents the design and simulation of a CMOS ultra-wideband low noise amplifier. The amplifier exhibits a form of thermal noise canceling with a shunt-feedback topology for operating in the band of 100-960 MHz. It was designed using the AMI C5F/N (0.5 mum) process. Thorough simulations including anticipated parasitics predict a noise figure ranging from 1.84-2.45 dB, a forward gain of 11.5plusmn0.22 dB, and input and output matching metrics (S11 and S22) below -10 dB.

Keywords

CMOS analogue integrated circuits; UHF amplifiers; UHF integrated circuits; VHF amplifiers; low noise amplifiers; ultra wideband technology; AMI C5F/N process; CMOS amplifier; UHF amplifier; VHF amplifier; frequency 100 MHz to 960 MHz; gain 11.5 dB; low noise amplifier; noise figure 1.84 dB to 2.45 dB; shunt-feedback topology; size 0.5 mum; thermal noise canceling; ultrawideband amplifier; Ambient intelligence; Costs; FCC; Frequency; Ground penetrating radar; Impedance matching; Low-noise amplifiers; Noise cancellation; Pulse amplifiers; Ultra wideband technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2008. MWSCAS 2008. 51st Midwest Symposium on

Conference_Location

Knoxville, TN

ISSN

1548-3746

Print_ISBN

978-1-4244-2166-4

Electronic_ISBN

1548-3746

Type

conf

DOI

10.1109/MWSCAS.2008.4616756

Filename

4616756