• DocumentCode
    2735039
  • Title

    QUBiC4plus: a cost-effective BiCMOS manufacturing technology with elite passive enhancements optimized for ´silicon-based´ RF-system-in-package environment

  • Author

    Deixler, P. ; Letavic, T. ; Mahatdejkul, T. ; Bouttement, Y. ; Brock, R. ; Tan, P.C. ; Saikumar, V. ; Rodriguez, A. ; Colclaser, R. ; Kellowan, P. ; Sun, H. ; Bell, N. ; Bower, D. ; Yao, A. ; van Langevelde, R. ; Vanhoucke, T. ; van Noort, W.D. ; Hurkx, G

  • Author_Institution
    Philips Semicond., Hopewell Junction, NY, USA
  • fYear
    2005
  • fDate
    9-11 Oct. 2005
  • Firstpage
    272
  • Lastpage
    275
  • Abstract
    QUBiC4plus is a RF-BiCMOS production technology tailored for ´silicon-based´ RF-SiP. The device menu includes 3 varactor styles, 7 resistor types, novel complimentary 24 V PMU devices, hi-k MIM capacitors, RC-triggered ESD protection and a choice between all-silicon, SiGe and SiGe:C bipolar transistors. Buried-p+ guardrings, DTI and very-high resistivity substrates ensure excellent circuit-block isolation and high-quality inductors. The advanced design flow features state-of-the-art models.
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; bipolar transistors; carbon; integrated circuit manufacture; integrated circuit modelling; radiofrequency integrated circuits; system-in-package; 24 V; BiCMOS manufacturing technology; PMU devices; QUBiC4plus; RC-triggered ESD protection; RF-BiCMOS production technology; SiGe:C; bipolar transistors; buried-p+ guardrings; circuit-block isolation; elite passive enhancements; hi-k MIM capacitors; high-quality inductors; resistor types; silicon-based RF-system-in-package environment; varactor styles; very-high resistivity substrates; BiCMOS integrated circuits; Electrostatic discharge; Isolation technology; MIM capacitors; Manufacturing; Optimized production technology; Phasor measurement units; Protection; Resistors; Varactors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the
  • Print_ISBN
    0-7803-9309-0
  • Type

    conf

  • DOI
    10.1109/BIPOL.2005.1555249
  • Filename
    1555249