• DocumentCode
    2735077
  • Title

    Photoresponse properties of BaSi2 films on N+-BaSi2/P+-Si tunnel junction for high efficiency thin film solar cells

  • Author

    Saito, Takanobu ; Matsumoto, Yuta ; Suemasu, Takashi ; Usami, Noritaka

  • Author_Institution
    Inst. of Appl. Phys., Univ. of Tsukuba, Tsukuba, Japan
  • fYear
    2010
  • fDate
    20-25 June 2010
  • Abstract
    We have grown n+-BaSi2/p+-Si tunnel junctions with different BaSi2 template thicknesses on Si(111) by molecular beam epitaxy. Both the epitaxial growth and low resistance as small as 0.05 Ω·cm2 were achieved for a bias voltage of 0.1 V when the template layer thickness was 1 nm. The photoresponse spectra were measured at room temperature for a 360-nm-thick undoped BaSi2 film grown on the tunnel junction. The photoresponsivity reached 74 mA/W at 2.3 eV under a reverse bias of 4 V, the highest value ever reported for semiconducting silicides.
  • Keywords
    barium compounds; molecular beam epitaxial growth; nitrogen; phosphorus; photovoltaic effects; silicon; solar cells; BaSi2; N-BaSi2-P-Si; epitaxial growth; molecular beam epitaxy; photoresponse property; photoresponse spectra; semiconducting silicide; size 1 nm; size 360 nm; temperature 293 K to 298 K; template layer thickness; thin film solar cells; tunnel junction; voltage 0.1 V; voltage 4 V; Junctions; Molecular beam epitaxial growth; Photovoltaic cells; Silicon; Substrates; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
  • Conference_Location
    Honolulu, HI
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-5890-5
  • Type

    conf

  • DOI
    10.1109/PVSC.2010.5614239
  • Filename
    5614239
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2735077