• DocumentCode
    2735089
  • Title

    NLDMOS RF optimization guidelines for wireless power amplifier applications

  • Author

    Szelag, B. ; Muller, D. ; Mourier, J. ; Judong, F. ; Giry, A. ; Pache, D. ; Monroy ; Roche, M.

  • Author_Institution
    Centre Commun de Microelectronique de Crolles, STMicroelectronics, Crolles, France
  • fYear
    2005
  • fDate
    9-11 Oct. 2005
  • Firstpage
    280
  • Lastpage
    283
  • Abstract
    LDMOSFET optimization for RF power applications is discussed. Starting from a quite standard transistor, a new architecture has been developed to reach high RF performances without sacrificing DC characteristics. The parasitic elements affecting the RF performances have been identified and reduced. The optimized device presents the following performances: BVds=15V, W.Ron lower than 3 Ohm.mm and fT larger than 30 GHz.
  • Keywords
    circuit optimisation; microwave power amplifiers; power MOSFET; 15 V; LDMOSFET optimization; NLDMOS RF optimization guidelines; RF power applications; power MOSFET; wireless power amplifier applications; CMOS technology; Guidelines; Immune system; MOSFETs; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Radiofrequency identification; Standards development; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the
  • Print_ISBN
    0-7803-9309-0
  • Type

    conf

  • DOI
    10.1109/BIPOL.2005.1555251
  • Filename
    1555251
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2735089