DocumentCode
2737157
Title
Localized doping using silicon ink technology for high efficiency solar cells
Author
Alberi, K. ; Scardera, G. ; Moutinho, H. ; Reedy, R.C. ; Romero, M.J. ; Rogojina, E. ; Kelman, M. ; Poplavskyy, D. ; Young, D.L. ; Lemmi, F. ; Antoniadis, H.
Author_Institution
Nat. Renewable Energy Lab., Golden, CO, USA
fYear
2010
fDate
20-25 June 2010
Abstract
Controlled localized doping of selective emitter structures via Innovalight Silicon Ink technology is demonstrated. Both secondary ion mass spectrometry and scanning capacitance microscopy reveal abrupt lateral dopant profiles at ink-printed boundaries. Uniform doping of iso- and pyramidal surfaces is also verified using scanning electron microscopy dopant contrast imaging.
Keywords
scanning electron microscopy; secondary ion mass spectroscopy; solar cells; Innovalight silicon ink technology; controlled localized doping; high efficiency solar cells; ink-printed boundaries; lateral dopant profiles; pyramidal surfaces; scanning capacitance microscopy; scanning electron microscopy dopant contrast imaging; secondary ion mass spectrometry; selective emitter structures; uniform doping; Doping; Ink; Photovoltaic cells; Scanning electron microscopy; Silicon; Surface treatment;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location
Honolulu, HI
ISSN
0160-8371
Print_ISBN
978-1-4244-5890-5
Type
conf
DOI
10.1109/PVSC.2010.5614442
Filename
5614442
Link To Document