• DocumentCode
    2738315
  • Title

    High-efficiency 1.3/spl mu/m InAsP/InGaAsP Strain-compensated Mqw Laser Diodes Grown By Hybrid Gas Source Mbe And Movpe

  • Author

    Tsuruoka, K. ; Nakamura, T. ; Anan, T. ; Sugou, S. ; Torikai, T.

  • Author_Institution
    Kansai Electronics Research Laboratoy, NEC Corporation, 2-9-1 Seiran, Otsu 520, JAPAN
  • fYear
    1997
  • fDate
    14-18 July 1997
  • Firstpage
    253
  • Lastpage
    253
  • Keywords
    Anisotropic magnetoresistance; Diode lasers; Epitaxial growth; Epitaxial layers; Molecular beam epitaxial growth; Polarization; Quantum well devices; Spectroscopy; Stimulated emission; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 1997. CLEO/Pacific Rim '97., Pacific Rim Conference on
  • Conference_Location
    Chiba, Japan
  • Print_ISBN
    0-7803-3889-8
  • Type

    conf

  • DOI
    10.1109/CLEOPR.1997.610930
  • Filename
    610930
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2738315