DocumentCode
2738752
Title
Toward uniform and high optical quality site-controlled quantum dots
Author
Cheng, K.Y. ; Cheng, Chien-Chia
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA
fYear
2011
fDate
10-12 Jan. 2011
Firstpage
31
Lastpage
32
Abstract
In this paper, the effects of process parameters, including nanopore formation, nanopore size, and surface cleaning conditions after nanopore formation on the characteristics of InAs SCQDs grown on GaAs are examined. The influence of MBE growth parameters on SCQD formation and approaches toward optimization of structural and optical properties will also be discussed.
Keywords
III-V semiconductors; indium compounds; nanofabrication; nanoporous materials; semiconductor growth; semiconductor quantum dots; surface cleaning; GaAs; InAs; MBE growth; nanopore formation; nanopore size; optical properties; structural properties; surface cleaning conditions; uniform high optical quality site-controlled quantum dots; Etching; Gallium arsenide; Molecular beam epitaxial growth; Quantum dot lasers; Substrates; Surface cleaning;
fLanguage
English
Publisher
ieee
Conference_Titel
Winter Topicals (WTM), 2011 IEEE
Conference_Location
Keystone, CO
Print_ISBN
978-1-4244-8428-7
Type
conf
DOI
10.1109/PHOTWTM.2011.5730031
Filename
5730031
Link To Document