Investigation on the Impact Ionization Breakdown Onset of Double-Gate MOSFET Structure with Optimized Hydrodynamic Model via Full-Band Monte Carlo Method

We report an investigation on the impact ionization breakdown voltage of double-gate MOSFET structure using optimized Hydrodynamic model. The optimized Hydrodynamic model is found to have comparable accuracy to Full-band Monte Carlo method in predicting impact ionization and breakdown voltage at a channel length of 24 nm and below. In addition, hot carrier activity is found to be confined in the channel-drain interface region and hence the double gate device is less likely to face a reliability threat due to impact ionization.