Fabrication and characteristics of CuInSe2/CuIn(SexS1−x)2 structure by the sulfurization of CuInSe2 thin film

Author

Guo, Jhe Wei ; Hsieh, Tung Po ; Wu, Chung Shin ; Chang, Jen Chuan ; Hsu, Shu Chun ; Sheng, Pei Sun ; Chuang, Chia Chih

Author_Institution

Photovoltaics Technol. Center, Ind. Technol. Res. Inst., Hsinchu, Taiwan

fYear

2010

fDate

20-25 June 2010

Abstract

CuInSe₂/CuIn(Se_xS_1-x)₂ structures have been fabricated on Mo/Glass substrate using Cu-poor or Cu-rich CuInSe₂ thin film by RTP sulfurization at high temperature. The surface morphologies of CuInSe₂ thin films could be changed with varied S amounts or ratio of Se/S during sulfurization. In our experimental results, the CuInSe₂/CuIn(Se_xS_1-x)₂ structure was easy formed based on Cu-rich CuInSe₂ thin film and the Cu_xSe phase was helpful to produce CuIn(Se_xS_1-x)₂ film onto CISe film. But, the second phase (CuxSe) must be etching in KCN solution after sulfurization of CuInSe₂/CuIn(Se_xS_1-x)₂ structures. The high quality and high open circuit voltage of chalcopyrite absorber had been made by co-evaporation and RTP sulfurization in this study.

Keywords

copper compounds; etching; indium compounds; semiconductor growth; semiconductor thin films; surface morphology; ternary semiconductors; vacuum deposition; wide band gap semiconductors; CuInSe₂-CuIn(Se_xS_1-x)₂; chalcopyrite absorber; co-evaporation; double layer absorber; etching; open circuit voltage; rapid thermal process; sulfurization; surface morphologies; thin film; Gallium; Glass; Powders; Surface treatment; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE

Conference_Location

Honolulu, HI

ISSN

0160-8371

Print_ISBN

978-1-4244-5890-5

Type

conf

DOI

10.1109/PVSC.2010.5614553

Filename

5614553