DocumentCode
2739707
Title
Modeling of Two-color HgCdTe Detectors
Author
Xu, X.Y. ; Ye, Zh.H. ; Lu, W. ; Chen, X. Sh ; Li, Zh.F.
Author_Institution
Chinese Acad. of Sci., Shanghai
fYear
2006
fDate
18-22 Sept. 2006
Firstpage
326
Lastpage
326
Abstract
In this paper the performance of two-color middle wavelength infrared photovoltaic HgCdTe detector is simulated numerically based on two-dimensional model. Structure of n-p-p-p-n is designed in simultaneous mode. Spectral response is calculated, crosstalk between two bands and the function of barrier layer are analyzed in detail. Calculation results show that the radiation in MW1(shorter wavelength in middle wavelength band) band can be absorbed in MW2(longer wavelength in middle wavelength band) diode, this causes MW1-to-MW2 crosstalk, and the crosstalk is linearly depended on the ratio of radiation power absorbed in MW2 diode to that in MW1 diode. The barrier layer can remarkably suppress the crosstalk caused by photocarriers diffusion. Without barrier layer, the MW1-to-MW2 crosstalk will increase as large as 10 times, and is dominated by photocarriers diffusion.
Keywords
cadmium compounds; crosstalk; infrared detectors; mercury compounds; numerical analysis; photodetectors; HgCdTe; MW1-to-MW2 crosstalk; barrier layer; middle wavelength infrared photovoltaic detector; numerical simulation; photocarrier diffusion; two-color HgCdTe detectors; Absorption; Crosstalk; Diodes; Electrons; Infrared detectors; Infrared imaging; Numerical simulation; Photovoltaic systems; Physics; Solar power generation;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
Conference_Location
Shanghai
Print_ISBN
1-4244-0400-2
Electronic_ISBN
1-4244-0400-2
Type
conf
DOI
10.1109/ICIMW.2006.368534
Filename
4222268
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