Synthesis and Field Emission Characteristics of Ga2O3 Nanorods with Ultra-Sharp Tips

Author

Bayam, Yavuz ; VJ, Logeeswaran ; Katzenmeyer, Aaron M. ; Chacon, Rebecca J. ; Wong, Michael C. ; Hunt, Charles E. ; Islam, M. Saif

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of California at Davis, Davis, CA

fYear

2008

fDate

18-21 Aug. 2008

Firstpage

573

Lastpage

575

Abstract

We successfully synthesized beta-Ga₂O₃ nanorods with ultra-sharp tips without use of a catalyst. The nanorods were produced by heating a GaAs wafer in a CVD chamber. The morphology and structure of the nanorods were characterized by scanning electron microscopy(SEM), Energy Dispersive X-ray Spectroscopy (EDS) and Raman-Scattering Spectroscopy. The field emission characteristics demonstrated a turn-on field of about 2.1 V mum^-1 and the threshold electric field of 5.6 V mum^-1.

Keywords

Raman spectra; X-ray chemical analysis; field emission; gallium compounds; nanostructured materials; scanning electron microscopy; CVD chamber; Ga₂O₃; Raman scattering spectroscopy; catalyst; energy dispersive X-ray spectroscopy; field emission; nanorods; scanning electron microscopy; wafer heating; Dispersion; Furnaces; Gallium arsenide; Heating; Nanostructures; Raman scattering; Scanning electron microscopy; Spectroscopy; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2008. NANO '08. 8th IEEE Conference on

Conference_Location

Arlington, TX

Print_ISBN

978-1-4244-2103-9

Electronic_ISBN

978-1-4244-2104-6

Type

conf

DOI

10.1109/NANO.2008.169

Filename

4617151