• DocumentCode
    2740490
  • Title

    The Effect of Pulse-Reverse Plating Time on Blind Micro Via Filling

  • Author

    Luo, Jen Tsung ; Lin, Wen Bing ; Shang, Laurence

  • Author_Institution
    Adv. Technol. Center, Atotech Taiwan Ltd., Taoyuan
  • fYear
    2008
  • fDate
    22-24 Oct. 2008
  • Firstpage
    395
  • Lastpage
    398
  • Abstract
    Horizontal pulse-reverse plating system was employed for blind micro via (BMV) filling process. The reverse plating time, frequency, and current shape was controlled or modified to observe the influence factors on BMV filling and thickness uniformity. Pulse-reverse plating system can reduce the surface thicknesses and had good ability to filling high aspect hole. During reverse time plating, the etching rate of surface copper was larger than that of via copper and it helped the filling of BMV. It mechanism was due to the effects of geometry and surface absorption of leveller. The dimple thickness showed an inverse ratio with reverse time. Reverse time dominated the reverse reaction of CudegharrCu2++2e-, and had influence on surface uniformity. Ferric ionic also plays an important role in the plating system. It reacts as a reductant which controls the reduction rate of Cu2+ and prevents the formation of void in the BMV. The reverse time was control in the range of 2-8 ms. It can be found that longer reverse time (8 ms) accelerated the via filling, however it also result in a poor quality of copper. Optical microscope, thickness measurement (SMES-4P), electrical polishing, optical profilometer, and scanning electronic microscope (SEM) were employed to characterize the physical morphology of the plating process.
  • Keywords
    copper; electroplating; etching; integrated circuit interconnections; polishing; printed circuits; reaction kinetics; reduction (chemical); scanning electron microscopy; sorption; surface morphology; BMV filling process; Cu; SEM; SMES-4P; blind microvia filling; dimple thickness; electrical polishing; etching; ferric ionic; high aspect hole filling; horizontal pulse-reverse plating system; leveller surface absorption; on-chip interconnects; optical microscopy; optical profilometer; physical morphology; printed circuit board; reduction rate; reverse reaction; reverse time plating; scanning electronic microscope; surface copper; surface thickness; thickness measurement; via copper; Copper; Etching; Filling; Frequency; Geometry; Optical microscopy; Scanning electron microscopy; Shape control; Surface morphology; Thickness control; Blind Micro Via; Cu Plating; PCB; Pulse Reverse plating;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microsystems, Packaging, Assembly & Circuits Technology Conference, 2008. IMPACT 2008. 3rd International
  • Conference_Location
    Taipei
  • Print_ISBN
    978-1-4244-3623-1
  • Electronic_ISBN
    978-1-4244-3624-8
  • Type

    conf

  • DOI
    10.1109/IMPACT.2008.4783895
  • Filename
    4783895