GaAs nanowire/PEDOT:PSS hybrid solar cells: Morphological and performance characterization

Author

Chao, Jiun-Jie ; Shiu, Shu-Chia ; Lin, Ching-Fuh

Author_Institution

Grad. Inst. of Photonics & Optoelectron., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2010

fDate

20-25 June 2010

Abstract

In this study, a new type of hybrid solar cell based on a heterojunction between poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and vertically aligned n-type GaAs nanowire (NW) arrays is investigated. The GaAs NW arrays are fabricated by directly performing the nano-etching of GaAs wafer with spun-on SiO₂ nanospheres as the etch mask through inductively coupled plasma reactive ion etching. The PEDOT:PSS adheres to the surface of GaAs NW arrays to form a p-n junction. The morphology of GaAs NW arrays strongly influences the characteristics of the GaAs NW/PEDOT:PSS hybrid solar cells. The suppression of reflectance and the interpenetrating heterojunction interface of GaAs NW arrays will offer great improvements in efficiency relative to a conventional planar cell. The power conversion efficiency of GaAs NW/PEDOT:PSS cells under AM 1.5 global one sun illumination can achieve 5.8%.

Keywords

III-V semiconductors; gallium arsenide; nanowires; silicon compounds; solar cells; sputter etching; GaAs; PEDOT:PSS; SiO₂; conversion efficiency; etch mask; hybrid solar cells; inductively coupled plasma reactive ion etching; nanoetching; nanowire arrays; reflectance suppression; Gallium arsenide; Gold; Photovoltaic systems; Sun;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE

Conference_Location

Honolulu, HI

ISSN

0160-8371

Print_ISBN

978-1-4244-5890-5

Type

conf

DOI

10.1109/PVSC.2010.5614644

Filename

5614644