DocumentCode
2741218
Title
Single Shot Infrared Ellipsometry with a Free Electron Laser and its potential applications
Author
Gensch, M. ; Lee, J.S. ; Hinrichs, K. ; Esser, N. ; Seidel, W. ; Roseler, A. ; Schade, U.
Author_Institution
lSAS -Inst.for Analytical Sci., Berlin
fYear
2006
fDate
18-22 Sept. 2006
Firstpage
416
Lastpage
416
Abstract
A novel division of amplitude polarimeter (DOAP) approach for single shot - infrared ellipsometry with a free electron laser source is presented. The set-up enables the simultaneous determination of the two independent ellipsometric parameters by measuring two ratios of intensities so that variations of the pulse power essentially do not affect the result. As proof-of-principle experiment we determined successfully the optical response of thin polymeric films on silicon. The high brilliance of a free electron laser (FEL) combined with the DOAP principle gives unique opportunities for example micro-focus, imaging or pump-probe ellipsometry.
Keywords
elemental semiconductors; ellipsometry; free electron lasers; polarimeters; polymer films; silicon; Si; division of amplitude polarimeter; ellipsometric parameters; free electron laser; infrared ellipsometry; optical response; pulse power; silicon; thin polymeric films; Electron optics; Ellipsometry; Free electron lasers; Optical films; Optical polymers; Optical pulses; Optical pumping; Polymer films; Power measurement; Pulse measurements;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
Conference_Location
Shanghai
Print_ISBN
1-4244-0400-2
Electronic_ISBN
1-4244-0400-2
Type
conf
DOI
10.1109/ICIMW.2006.368624
Filename
4222358
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