Monolithic integration of a GaInAs PIN photodiode and AlGaAs/GaAs/AlGaAs HEMTs on GaAs substrate

Author

Bronner, W. ; Benz, W. ; Dammann, M. ; Ganser, P. ; Grun, N. ; Hurm, V. ; Jakobus, T. ; Kohler, K. ; Ludwig, M. ; Olander, E.

Author_Institution

Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany

fYear

1997

fDate

8-11 Sep 1997

Firstpage

383

Lastpage

386

Abstract

A monolithic integrated optoelectronic receiver for a wavelength of 1.55 μm consisting of a GaInAs PIN diode and a transimpedance AlGaAs/GaAs HEMT amplifier has been fabricated. The available technology includes three etch processes, five metal lift-off processes, an oxygen implantation for device isolation, two dielectric layers of SiN and an electroplated gold interconnection layer. The gate levels for enhancement and depletion FETs were carried out using e-beam lithography with gate lengths of 0.3 μm. The responsivity of the photodiodes is 0.40 A/W, and the photoreceiver has a -3 dB bandwidth of 6.9 GHz. Clear and open eye diagrams for a 10 Gbit/s optical data stream have been obtained. At this data rate the sensitivity of the photoreceiver is better than -17.5 dBm (BER=10^-9). The yield of this circuit is better than 80% realized on 2´´ wafers

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; integrated optoelectronics; optical receivers; p-i-n photodiodes; 0.3 micron; 1.55 micron; 10 Gbit/s; 6.9 GHz; AlGaAs-GaAs-AlGaAs; AlGaAs/GaAs/AlGaAs transimpedance HEMT amplifier; GaAs; GaAs substrate; GaInAs; GaInAs PIN photodiode; SiN dielectric layer; circuit yield; device isolation; e-beam lithography; electroplated gold interconnection layer; etching; eye diagram; metal lift-off; monolithic integration; optoelectronic receiver; oxygen implantation; responsivity; sensitivity; Dielectric devices; Etching; Gallium arsenide; HEMTs; Integrated optoelectronics; Isolation technology; Monolithic integrated circuits; Optical amplifiers; PIN photodiodes; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 1997 IEEE International Symposium on

Conference_Location

San Diego, CA

Print_ISBN

0-7503-0556-8

Type

conf

DOI

10.1109/ISCS.1998.711660

Filename

711660