DocumentCode
2742538
Title
The Technology of Porous Silicon Substrate in Radio Frequency/Microwave circuits
Author
Guo, F. ; Liu, Y. ; Zhang, L. ; Zhang, Y. ; Kong, J. ; Zhu, S. ; Zhu, Z.
Author_Institution
East China Normal Univ., Shanghai
fYear
2006
fDate
18-22 Sept. 2006
Firstpage
485
Lastpage
485
Abstract
Monolithic microwave IC (MMIC) is on low-resistivity silicon that mostly would bring line attenuation and deteriorate of circuit quality because of substrate extremely high dielectric loss. There has been a great demand for low-loss and low-cost substrate. Porous silicon (PS) has been proved as a promiseful substrate material for CPW, MEMS switch, and so on high frequency applications.
Keywords
MMIC; elemental semiconductors; silicon; CPW; MEMS switch; MMIC; Si; circuit quality; line attenuation; low-resistivity silicon; monolithic microwave IC; porous silicon substrate; radio frequency-microwave circuits; substrate material; Attenuation; Dielectric losses; Dielectric substrates; MMICs; Microwave circuits; Microwave integrated circuits; Microwave technology; Monolithic integrated circuits; Radio frequency; Silicon; CPW; MEMS switch; PS; antenna; insertion Loss;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
Conference_Location
Shanghai
Print_ISBN
1-4244-0400-2
Electronic_ISBN
1-4244-0400-2
Type
conf
DOI
10.1109/ICIMW.2006.368693
Filename
4222427
Link To Document