• DocumentCode
    2742581
  • Title

    Properties of MBE Growth InN: Cr Films

  • Author

    Chen, P.P. ; Lu, Wenchao ; Makino, H. ; Yao, T.

  • Author_Institution
    Chinese Acad. of Sci., Shanghai
  • fYear
    2006
  • fDate
    18-22 Sept. 2006
  • Firstpage
    487
  • Lastpage
    487
  • Abstract
    InN:Cr films were prepared at Al2O3 substrate by low temperature (300degC) molecular beam epitaxy (MBE). The InN:Cr films show clear ferromagnetic properties up to 350K. The electronic structure of the InN:Cr film has been studied by photoemission spectroscopy.
  • Keywords
    III-V semiconductors; aluminium compounds; chromium; electronic structure; ferromagnetism; indium compounds; molecular beam epitaxial growth; photoelectron spectra; Al2O3; InN:Cr; MBE; electronic structure; ferromagnetic properties; low temperature molecular beam epitaxy; photoemission spectroscopy; temperature 300 degC to 350 degC; Chromium; Magnetic films; Magnetic materials; Magnetization; Molecular beam epitaxial growth; Optical films; Physics; Plasma temperature; Semiconductor films; Spectroscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    1-4244-0400-2
  • Electronic_ISBN
    1-4244-0400-2
  • Type

    conf

  • DOI
    10.1109/ICIMW.2006.368695
  • Filename
    4222429
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2742581