• DocumentCode
    2742669
  • Title

    Optical properties of self-assemble InAs quantum dots studies by piezomodulated reflectance spectroscopy

  • Author

    Wang, C. ; Chen, P.P. ; Liu, Z.L. ; Xia, C.S. ; Li, T.X. ; Zhang, J.B. ; Chen, X.S. ; Lu, W.

  • Author_Institution
    Chinese Acad. of Sci., Shanghai
  • fYear
    2006
  • fDate
    18-22 Sept. 2006
  • Firstpage
    493
  • Lastpage
    493
  • Abstract
    We report our investigation on piezoreflectance spectra (PZR) of a conventional InAs quantum dots (CVQD) and an InAs/In0.15Ga0.85As dots-in-a-well (DWELL). A large red-shift of ground state QD0 between two samples is attributed mainly to larger size of DWELL induced by the activated strained-driven decomposition.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; piezoreflectance; quantum dots; InAs; InAs-InGaAs; dots-in-a-well; piezomodulated reflectance spectroscopy; piezoreflectance spectra; self-assemble quantum dots; strained-driven decomposition; Gallium arsenide; Laboratories; Material properties; Molecular beam epitaxial growth; Physics; Quantum dots; Reflectivity; Spectroscopy; Stationary state; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    1-4244-0400-2
  • Electronic_ISBN
    1-4244-0400-2
  • Type

    conf

  • DOI
    10.1109/ICIMW.2006.368701
  • Filename
    4222435
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2742669