DocumentCode
2742882
Title
Interaction between post wire saw cleaning and the subsequent cell fabrication saw damage etch and texturing process
Author
Allardyce, George ; Barr, Robert ; Chan, Raymond ; Moynihan, Matt ; O´Connor, Corey ; Ridler, Tony
Author_Institution
Dow Chem. Co., Coventry, UK
fYear
2010
fDate
20-25 June 2010
Abstract
Post wire saw wafers presented for cleaning are heavily contaminated with cutting fluid slurry, silicon kerf, trace metallic species and oxides. There is no industry standard process or equipment set for this operation with various options utilised by the wafer manufacturer. However a common theme is the use of chemical cleaners to facilitate removal of the debris and contaminants. This paper describes studies conducted to determine potential effects of differing cleaner chemistry types on subsequent cell fabrication. By characterisation of contact angle, topography, etch depth and reflectance it is shown that certain cleaner types can have a profound and potentially adverse effect on the texture process and pyramid generation. Potential mechanisms are discussed and additional studies demonstrating that such adverse effects can be rectified are described.
Keywords
cleaning; contact angle; cutting; slurries; cell fabrication saw damage etch; chemical cleaners; contact angle; cutting fluid slurry; etch depth; oxides; post wire saw cleaning; reflectance; silicon kerf; texturing process; topography; trace metallic species; Reflectivity; Silicon; Surface cleaning; Surface texture; Surface topography;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location
Honolulu, HI
ISSN
0160-8371
Print_ISBN
978-1-4244-5890-5
Type
conf
DOI
10.1109/PVSC.2010.5614741
Filename
5614741
Link To Document