• DocumentCode
    2742882
  • Title

    Interaction between post wire saw cleaning and the subsequent cell fabrication saw damage etch and texturing process

  • Author

    Allardyce, George ; Barr, Robert ; Chan, Raymond ; Moynihan, Matt ; O´Connor, Corey ; Ridler, Tony

  • Author_Institution
    Dow Chem. Co., Coventry, UK
  • fYear
    2010
  • fDate
    20-25 June 2010
  • Abstract
    Post wire saw wafers presented for cleaning are heavily contaminated with cutting fluid slurry, silicon kerf, trace metallic species and oxides. There is no industry standard process or equipment set for this operation with various options utilised by the wafer manufacturer. However a common theme is the use of chemical cleaners to facilitate removal of the debris and contaminants. This paper describes studies conducted to determine potential effects of differing cleaner chemistry types on subsequent cell fabrication. By characterisation of contact angle, topography, etch depth and reflectance it is shown that certain cleaner types can have a profound and potentially adverse effect on the texture process and pyramid generation. Potential mechanisms are discussed and additional studies demonstrating that such adverse effects can be rectified are described.
  • Keywords
    cleaning; contact angle; cutting; slurries; cell fabrication saw damage etch; chemical cleaners; contact angle; cutting fluid slurry; etch depth; oxides; post wire saw cleaning; reflectance; silicon kerf; texturing process; topography; trace metallic species; Reflectivity; Silicon; Surface cleaning; Surface texture; Surface topography;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
  • Conference_Location
    Honolulu, HI
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-5890-5
  • Type

    conf

  • DOI
    10.1109/PVSC.2010.5614741
  • Filename
    5614741