Resonant tunneling through single InAs quantum dot at room temperature

Author

Lu, Wei ; Li, Tianxin ; Xiong, Dayuan ; Chen, Pingping ; Xia, Changsheng ; Liu, Zhaolin ; Chen, Xiaoshuang

Author_Institution

Chinese Acad. of Sci., Shanghai

fYear

2006

fDate

18-22 Sept. 2006

Firstpage

529

Lastpage

529

Abstract

Transport properties of freestanding InAs quantum dots on GaAs(001) are investigated by means of conductive atomic force microscopy. Resonant tunneling through the hole state of valence-band of single quantum dot is observed at room temperature. The threshold bias for resonant tunneling is related with the dot size, while the amplitude of tunneling current changes little when the height of dot varies from 2 to 10 nm.

Keywords

III-V semiconductors; atomic force microscopy; quantum dots; resonant tunnelling; valence bands; GaAs; InAs; conductive atomic force microscopy; freestanding quantum dots; hole state; resonant tunneling; size 2 nm to 10 nm; temperature 293 K to 298 K; transport property; Atomic force microscopy; Gallium arsenide; Molecular beam epitaxial growth; Photonic band gap; Photonic crystals; Quantum dots; Quantum entanglement; Resonant tunneling devices; Surface morphology; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0400-2

Electronic_ISBN

1-4244-0400-2

Type

conf

DOI

10.1109/ICIMW.2006.368737

Filename

4222471