Novel high performance strained layer MQW monolithically integrated DFB laser-electroabsorption modulator using one identical single active layer

Author

Ramdane, A. ; Ougazzaden, A. ; Devaux, F. ; Delorme, F. ; Schneider, M. ; Landreau, J. ; Gloukhian, A.

Author_Institution

CNET, Bagneux, France

fYear

1994

fDate

19-23 Sep 1994

Firstpage

39

Lastpage

40

Abstract

Summary form only given. A novel and very simple approach is demonstrated for strained layer InGaAsP MQW distributed feedback laser-electroabsorption modulator monolithic integration with very high performance at 1.5 μm (13.6 dB extinction ratio at 1.5 V operating voltage for a 70 μm long modulator)

Keywords

III-V semiconductors; deformation; distributed feedback lasers; electro-optical modulation; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; laser modes; quantum well lasers; 1.5 V; 1.5 mum; 70 mum; InGaAsP; InGaAsP MQW distributed feedback laser-electroabsorption modulator monolithic integration; MQW monolithically integrated DFB laser; electroabsorption modulator; extinction ratio; high performance; operating voltage; single active layer; strained layer; Bandwidth; Extinction ratio; Lasers and electrooptics; Monolithic integrated circuits; Protons; Quantum well devices; Telecommunications; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1994., 14th IEEE International

Conference_Location

Maui, HI

Print_ISBN

0-7803-1754-8

Type

conf

DOI

10.1109/ISLC.1994.518909

Filename

518909