Limits to the performance of transverse and waveguide MQW electroabsorption and electrorefraction modulators

Author

Stevens, P.J. ; Whitehead, M. ; Bradley, P.J. ; Rivers, A.W. ; Parry, G. ; Roberts, J.S. ; Mistry, P. ; Pate, M.A. ; Hill, G.

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. Coll., London, UK

fYear

1988

fDate

11-15 Sep 1988

Firstpage

33

Abstract

The authors evaluate theoretically the ultimate limits to the attainable transmission change of transverse GaAs/GaAlAs MQW electroabsorption modulators. They report new experimental results of transverse device performance which show that the performance of currently realisable transverse modulators is close to theoretical limits. Finally they show that when the PIN structure is used as a waveguide the amplitude and phase modulation achievable do depend on background doping but limiting performances can be achieved with current growth techniques

Keywords

III-V semiconductors; aluminium compounds; electro-optical devices; electro-optical effects; electroabsorption; gallium arsenide; optical modulation; semiconductor quantum wells; GaAs-GaAlAs; III-V semiconductors; MQW electroabsorption modulators; PIN structure; amplitude modulation; electrorefraction modulators; phase modulation; transverse device performance; transverse modulators; waveguide modulators;

fLanguage

English

Publisher

iet

Conference_Titel

Optical Communication, 1988. (ECOC 88). Fourteenth European Conference on (Conf. Publ. No.292)

Conference_Location

Brighton

Type

conf

Filename

93515