DocumentCode
274568
Title
Heterojunction bipolar transistor pre-amplifier IC for ultra fast lightwave transmission
Author
Ibe, Hiroyuki ; Yamakawa, Hideaki ; Atsumi, Takehiko ; Nakamura, Masaru ; Akagi, Junko ; Asaka, Masayuki ; Obara, Masao
Author_Institution
Toshiba Corp., Kawasaki, Japan
fYear
1988
fDate
11-15 Sep 1988
Firstpage
495
Abstract
An ultra wideband (4.4 GHz) and low noise (9 pA/√Hz) pre-amplifier for an optical receiver has been monolithically integrated using the GaAlAs/GaAs heterojunction bipolar transistor (HBT) process for the first time
Keywords
III-V semiconductors; aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; linear integrated circuits; optical communication equipment; preamplifiers; receivers; 4.4 GHz; GaAlAs-GaAs; III-V semiconductors; heterojunction bipolar transistor preamplifier; monolithic integration; optical receiver; ultra fast lightwave transmission;
fLanguage
English
Publisher
iet
Conference_Titel
Optical Communication, 1988. (ECOC 88). Fourteenth European Conference on (Conf. Publ. No.292)
Conference_Location
Brighton
Type
conf
Filename
93629
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