An Asymmetrical Offset Source/Drain Structure For Virtual Ground Array Flash Memory With DINOR Operation

We proposed previously [1] a novel flash memory cell structure named DINOR (Divided bit-line NOR ) utilizing Fowler-Nordheim erase/write operation, which has realized low power dissipation and high performance with low cost. In this paper, a new application of this DINOR operation ( F-N erase/write ) to a virtual ground array flash memory is described. By using a novel asymmetrical offset source/drain structure, small cell size of 1.0/spl mu/m/sup 2/ based on 0.5/spl mu/m CMOS process will be realized and which makes it possible to realize high speed 3V only 64M bit flash memory.