• DocumentCode
    2746125
  • Title

    A Novel Low Resistance Salicide Technology (SWAN) For Quarter-micron CMOS

  • Author

    Matsubara, Y. ; Sekine, M. ; Nishio, N. ; Shinmura, T. ; Noguchi, K. ; Horiuchi, T. ; Yamada, Y. ; Kitano, T.

  • Author_Institution
    NEC Corporation
  • fYear
    1993
  • fDate
    17-19 May 1993
  • Firstpage
    103
  • Lastpage
    104
  • Abstract
    A low resistance salicide technology which includes a formation of Selective W on TiSi/sub 2/ and an ANnealing after W deposition (SWAN) has been proposed. A remarkable reduction in sheet resistance (down to 1/10) and thermal stability (up to 850"C) have been achieved for quamr-micron CMOS.
  • Keywords
    Annealing; Junctions; Silicon; Temperature; Thermal resistance; Thermal stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1993. Digest of Technical Papers. 1993 Symposium on
  • Conference_Location
    Kyoto, Japan
  • Type

    conf

  • DOI
    10.1109/VLSIT.1993.760266
  • Filename
    760266
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2746125