Parameter extractions and a new calibration methodology for MOSFET sensors

In this work, we studied the availability of p-type MOSFET with 1 mum channel width and 0.15 mum channel length as a stress sensor. Under mechanical, thermal, and thermo-mechanical coupling effects, parameters of the MOSFET devices were extracted based on a new measurement methodology, and linear relationships between drain current variation and stress and/or thermal effects were obtained. According to the measurement data, the extremely important thermal effect was also noted. It is concluded in this work that the newly experimental design and the extracted parameters are useful for MOSFET stress sensor´s design and applications.