DocumentCode
2746382
Title
High power semiconductor devices
Author
Gentry, F. ; York, R.
Author_Institution
General Electric Company, Auburn, NY, USA
Volume
13
fYear
1966
fDate
21-25 March 1966
Firstpage
35
Lastpage
43
Abstract
A brief historical account of the development of high-power semiconductor devices is followed by a description of the existing state of the art. We present a discussion of the interplay between the needs of the circuit engineer and the problems which beset the device designer in meeting these needs, and conclude with a brief look at some of the newer developments in the power semiconductor device field.
Keywords
Circuits; Costs; Phase control; Power semiconductor devices; Power semiconductor switches; Power transistors; Rectifiers; Silicon; Thyristors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
1958 IRE International Convention Record
Conference_Location
New York, NY, USA
Type
conf
DOI
10.1109/IRECON.1965.1147502
Filename
1147502
Link To Document