DocumentCode
2746453
Title
Room temperature polariton lasing from a single GaN nanowire microcavity
Author
Das, A. ; Heo, J. ; Jankowski, M. ; Guo, W. ; Zhang, L. ; Deng, H. ; Bhattacharya, P.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
fYear
2011
fDate
9-13 Oct. 2011
Firstpage
119
Lastpage
120
Abstract
The paper demonstrates an ultra-low threshold polariton laser by using a single GaN nanowire as the active medium embedded in a dielectric microcavity. We have also studied the effect of detuning on the lasing characteristics.
Keywords
gallium compounds; laser tuning; microcavity lasers; nanowires; polaritons; semiconductor lasers; semiconductor quantum wires; GaN; active medium; detuning; dielectric microcavity; nanowire microcavity; room temperature polariton lasing; temperature 293 K to 298 K; Coherence; Excitons; Gallium nitride; Microcavities; Photonics; Plasma temperature; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (PHO), 2011 IEEE
Conference_Location
Arlington, VA
Print_ISBN
978-1-4244-8940-4
Type
conf
DOI
10.1109/PHO.2011.6110454
Filename
6110454
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