Towards accurate charge transport with SINIS turnstile

Author

Maisi, V.F. ; Saira, O. -P ; Kemppinen, A. ; Pashkin, Yu A. ; Averin, D.V. ; Manninen, A. ; Pekola, J.P.

Author_Institution

Centre for Metrol. & Accreditation (MIKES), Espoo, Finland

fYear

2012

fDate

1-6 July 2012

Firstpage

248

Lastpage

249

Abstract

We discuss the current quantization obtainable in SINIS turnstiles. Various error processes, for example environmentally assisted and higher order tunneling as well as quasiparticle exitations in superconducting leads, may limit the achievable quantization. We argue that by careful design of the device, relative uncertainty of less than 10^-7, required by metrological applications, is feasible. We also present a scheme for error detection of the turnstiles.

Keywords

electric variables measurement; measurement errors; measurement standards; measurement uncertainty; single electron transistors; transport processes; SINIS turnstile; accurate charge transport; error detection; error process; hybrid single electron transistor; metrological application; relative uncertainty; Accuracy; Logic gates; Metrology; Single electron transistors; Transistors; Tunneling; Voltage measurement; Measurement standards; metrology; nanoelectronics; quantum mechanics; single electron devices; single electron transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Precision Electromagnetic Measurements (CPEM), 2012 Conference on

Conference_Location

Washington, DC

ISSN

0589-1485

Print_ISBN

978-1-4673-0439-9

Type

conf

DOI

10.1109/CPEM.2012.6250895

Filename

6250895