Hybrid CdHgTe-silicon infrared focal plane arrays

Author

Baker, I.M. ; Crimes, G.J. ; Ard, C.K. ; Jenner, M.D. ; Parsons, J.E. ; Ballingall, R.A. ; Elliot, C.T.

Author_Institution

Philips Components Ltd., Southampton, UK

fYear

1990

fDate

5-7 Jun 1990

Firstpage

78

Lastpage

87

Abstract

Infrared sensitive focal planes consisting of matrices of photovoltaic CdHgTe diodes coupled to silicon multiplexing circuitry have been demonstrated in linear formats up to 1024 elements and in high density, multifunctional, two-dimensional arrays of up to 128×128 elements. The authors describe the technology used, in particular with respect to the radiometric performance achieved in hybrid arrays and to aspects such as manufacturability and reliability

Keywords

II-VI semiconductors; cadmium compounds; elemental semiconductors; hybrid integrated circuits; image sensors; infrared detectors; integrated circuit technology; mercury compounds; photovoltaic cells; semiconductor technology; silicon; 1024 pixels; 128 pixels; 16384 pixels; CdHgTe-Si; IC technology; II-VI semiconductors; hybrid arrays; infrared focal plane arrays; manufacturability; multiplexing circuitry; photovoltaic CdHgTe diodes; radiometric performance; reliability; two-dimensional arrays;

fLanguage

English

Publisher

iet

Conference_Titel

Advanced Infrared Detectors and Systems, 1990., Fourth International Conference on

Conference_Location

London

Print_ISBN

0-86341-702-7

Type

conf

Filename

98657