• DocumentCode
    2747964
  • Title

    InAs Electron-Avalanche Photodiodes: From leaky diodes to extremely low noise avalanche photodiodes

  • Author

    Ker, Pin Jern ; Marshall, Andrew ; Gomes, Rajiv ; David, John Paul ; Ng, Jo Shien ; Tan, Chee Hing

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
  • fYear
    2011
  • fDate
    9-13 Oct. 2011
  • Firstpage
    276
  • Lastpage
    277
  • Abstract
    Avalanche gain and excess noise characteristics of InAs APDs showed that high gain can be achieved with excess noise factor F~1.5 across temperatures ranging from 77 to 298K.
  • Keywords
    III-V semiconductors; avalanche photodiodes; electrons; indium compounds; InAs; avalanche photodiodes; electron; leaky diodes; temperature 77 K to 298 K; Avalanche photodiodes; Dark current; Leakage current; Noise; Temperature; Temperature dependence; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics Conference (PHO), 2011 IEEE
  • Conference_Location
    Arlington, VA
  • Print_ISBN
    978-1-4244-8940-4
  • Type

    conf

  • DOI
    10.1109/PHO.2011.6110533
  • Filename
    6110533
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2747964