DocumentCode
2747990
Title
Numerical simulation of InAlAs/InAlGaAs tandem avalanche photodiodes
Author
Sun, Wenlu ; Zheng, Xiaoguang ; Lu, Zhiwen ; Chen, Baile ; Holmes, Archie L., Jr. ; Campbell, Joe C.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA, USA
fYear
2011
fDate
9-13 Oct. 2011
Firstpage
280
Lastpage
281
Abstract
Monte Carlo simulation is performed on a three-stage avalanche photodiode (APD). Two modifications to further reduce the excess noise are proposed.
Keywords
III-V semiconductors; Monte Carlo methods; aluminium compounds; avalanche photodiodes; gallium arsenide; indium compounds; InAlAs-InAlGaAs; Monte Carlo simulation; excess noise; tandem avalanche photodiodes; three stage avalanche photodiode; Avalanche photodiodes; Electric fields; Impact ionization; Indium compounds; Monte Carlo methods; Noise; Semiconductor process modeling; Monte Carlo simulation; avalanche photodiode; impact ionization;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (PHO), 2011 IEEE
Conference_Location
Arlington, VA
Print_ISBN
978-1-4244-8940-4
Type
conf
DOI
10.1109/PHO.2011.6110535
Filename
6110535
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