PdGe on GaAs: A study of the applicability in InGaP/GaAs HBT fabrication

Author

Ahmari, D.A. ; Hattendorf, M.L. ; Lemmerhirt, D.F. ; Yang, Q. ; Hartmann, Q.J. ; Stillman, G.E.

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA

fYear

1997

fDate

8-11 Sep 1997

Firstpage

467

Lastpage

470

Abstract

Recently InGaP/GaAs HBTs have demonstrated performance comparable to AlGaAs/GaAs and have proven to be well suited for high-speed and low-noise applications. Despite the excellent performance of InGaP/GaAs HBTs, continued efforts towards reducing the delay associated with the emitter resistance and capacitance are required. To help minimize the emitter resistance, PdGe contacts on n-type GaAs were studied. This experiment studies the behavior of the PdGe alloyed on a hot plate for times less than 30 minutes and compares results to RTA alloys. Also studied is the behavior of the PdGe contacts alloyed in various ambients. Finally, the issues associated with performing a self-aligned emitter etch with PdGe contacts are also discussed

Keywords

III-V semiconductors; etching; gallium arsenide; gallium compounds; germanium alloys; heterojunction bipolar transistors; indium compounds; ohmic contacts; palladium alloys; semiconductor device metallisation; InGaP-GaAs; InGaP/GaAs HBT fabrication; PdGe contact; PdGe-GaAs; emitter resistance; hot plate alloying; n-type GaAs; self-aligned emitter etching; Chemicals; Contact resistance; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Laboratories; Microelectronics; Temperature; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 1997 IEEE International Symposium on

Conference_Location

San Diego, CA

Print_ISBN

0-7503-0556-8

Type

conf

DOI

10.1109/ISCS.1998.711716

Filename

711716