Ultra-linear pseudomorphic HEMTs for wireless communications: A simulation study

Author

Borsosfoldi, Z. ; Webster, D.R. ; Thayne, I.G. ; Asenov, A. ; Haigh, D.G. ; Beaumont, S.P.

Author_Institution

Dept. of Electron. & Electr. Eng., Glasgow Univ., UK

fYear

1997

fDate

8-11 Sep 1997

Firstpage

475

Lastpage

478

Abstract

In this paper, we apply numerical device simulation in the design of pseudomorphic HEMTs with improved linearity and reduced intermodulation products aimed at wireless communications applications. We show that in channel doped GaAs pHEMTs the introduction of a p-doped buffer layer significantly improves the device linearity leading to a 10 dB suppression of 3rd order distortion over a wide bias range with similar gain when compared with a more standard δ-doped GaAs pHEMT device

Keywords

III-V semiconductors; doping profiles; gallium arsenide; high electron mobility transistors; intermodulation distortion; radio equipment; semiconductor device models; δ-doped GaAs pHEMT; GaAs; channel doped GaAs pHEMT; device linearity; distortion; gain; intermodulation product; numerical simulation; p-doped buffer layer; pseudomorphic HEMT; wireless communication; Consumer electronics; Doping; Gallium arsenide; Intermodulation distortion; Linearity; Medical simulation; Nanoelectronics; Numerical simulation; PHEMTs; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 1997 IEEE International Symposium on

Conference_Location

San Diego, CA

Print_ISBN

0-7503-0556-8

Type

conf

DOI

10.1109/ISCS.1998.711718

Filename

711718