• DocumentCode
    2749579
  • Title

    The comparison of electric field intensity effects to the bean sprouts growing

  • Author

    Kiatgamjorn, P. ; Khan-ngern, Werachet ; Nitta, S.

  • Author_Institution
    Fac. of Eng., King Mongkut´s Inst. of Technol., Bangkok, Thailand
  • fYear
    2003
  • fDate
    4-7 Nov. 2003
  • Firstpage
    142
  • Lastpage
    147
  • Abstract
    The electric field intensity is varied at 10, 20, 25 kV/m. This paper is focused on the height of stems and the length of roots. The effect of electric field intensity is evaluated on bean sprout growing. The electric field intensity is analyzed by the finite element method. Experimental results indicate that the bean sprout in high electric field intensity has a better growth in comparison with that of low electric field based on statistical analysis.
  • Keywords
    agriculture; biological effects of fields; crops; electric field effects; finite element analysis; bean sprout growing; electric field intensity effects; finite element method; root length; statistical analysis; stem height; Electric fields; Electric variables measurement; Electrodes; Equations; Finite element methods; Length measurement; Measurement standards; Plastics; Statistical analysis; Statistics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Environmental Electromagnetics, 2003. CEEM 2003. Proceedings. Asia-Pacific Conference on
  • Conference_Location
    Hangzhou, China
  • Print_ISBN
    7-5635-0802-3
  • Type

    conf

  • DOI
    10.1109/CEEM.2003.238651
  • Filename
    1282264