DocumentCode
2749599
Title
Integrated S band mixers
Author
Genzabella, C. ; Howell, C.
Author_Institution
Microwave Associates, Inc., Burlington, MA, USA
Volume
14
fYear
1966
fDate
21-25 March 1966
Firstpage
113
Lastpage
118
Abstract
This paper describes the approaches used and some of the results obtained building integrated mixers in 
band. These mixers are built with a unique "bilithic" Schottky-barrier diode chip and evaporated microstrip circuitry on alumina dielectric. Mixer noise figures are less than 7.5 db with local oscillator powers of 
to 30 mw. The impedances are 
in and out with the signal input VSWR being less than 1.5/1 over the local oscillator range and a bandwidth of 
%.
band. These mixers are built with a unique "bilithic" Schottky-barrier diode chip and evaporated microstrip circuitry on alumina dielectric. Mixer noise figures are less than 7.5 db with local oscillator powers of to 30 mw. The impedances are in and out with the signal input VSWR being less than 1.5/1 over the local oscillator range and a bandwidth of %.Keywords
Distributed parameter circuits; Integrated circuit noise; Local oscillators; Microstrip; Microwave integrated circuits; Noise figure; Power transmission lines; Schottky diodes; Semiconductor device noise; Semiconductor diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
1958 IRE International Convention Record
Conference_Location
New York, NY, USA
Type
conf
DOI
10.1109/IRECON.1966.1147703
Filename
1147703
Link To Document