A 0.18µm 3.25–5.6GHz and 6–10.4GHz band switchable low noise amplifier

Author

Hung, Yeh-Tai ; Tsai, Shang-Ho ; Chen, Yen-Chang ; Huang, Zhe-Yang

Author_Institution

Dept. of Electr. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

2

fYear

2010

fDate

20-23 Sept. 2010

Firstpage

1

Lastpage

4

Abstract

One band switchable low noise amplifier (LNA) is designed for wideband applications. The proposed band switchable LNA has two switchable bands. The design consists of a input matching circuit, two cascode common-source amplifiers and an output buffer for measurement. The proposed LNA is designed with two switching capacitors as loading that use NMOS to make high quality factor. The proposed LNA gives switchable gains of 10.8dB and 16.8dB, and noise figure of 3.6-6.2dB and 3.1-6.5dB at 3.255.6GHz and 6-10.4GHz frequency band, respectively, while consuming 22.46mW through a 1.8V power supply using the TSMC 0.18μm CMOS technology.

Keywords

CMOS integrated circuits; low noise amplifiers; microwave amplifiers; CMOS technology; NMOS; TSMC; band switchable LNA; band switchable low noise amplifier; cascode common source amplifiers; frequency 3.25 GHz to 5.6 GHz; frequency 6 GHz to 10.4 GHz; gain 10.8 dB; gain 16.8 dB; gain 3.1 dB to 6.5 dB; input matching circuit; size 0.18 mum; switching capacitors; CMOS integrated circuits; Capacitors; Impedance matching; MOS devices; Noise; Switches; Wideband; CMOS; LNA; RF; band switchable; low noise amplifier; switching capacitors;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultra-Wideband (ICUWB), 2010 IEEE International Conference on

Conference_Location

Nanjing

Print_ISBN

978-1-4244-5305-4

Electronic_ISBN

978-1-4244-5306-1

Type

conf

DOI

10.1109/ICUWB.2010.5615270

Filename

5615270