High power lasers on InP substrates

In this paper, the authors have presented a careful optimization of the laser parameters and designed a 100 μm wide broad area InP based laser diode with slope efficiency of 0.65W/A, wall-plug efficiency close to 50%, and emission power more than 1W at 1440 nm. Power as high as 2W was achieved at 55°C heat sink temperature allowing use in uncooled environments for cost sensitive applications. Higher power can be reached by making longer cavity, but at the expense of reduced wall-plug efficiency as the optical losses increase with the length of the cavity. Ultimately the maximum achievable power was determined by the minimum acceptable wall-plug efficiency and the ability to reduce optical losses and reduce the thermal resistance. It was also shown that high-power lasers can be designed at wavelength as short as 1120 nm in the AllnGaAs /InP system for potential application for orange light sources through frequency doubling and also O band Raman amplification. Longer wavelength Raman pump lasers with power in excess of 0.5 W for 40 G dense wavelength multiplexing optical networks were reviewed as well.