Microcavity lasers: emission from a fully confined photon state

Author

Reithmaier, J.P. ; Rohner, M. ; Schafer, F. ; Zull, H. ; Forchel, A.

Author_Institution

Technische Phys., Wurzburg Univ., Germany

fYear

1997

fDate

8-11 Sep 1997

Firstpage

553

Lastpage

556

Abstract

Optically pumped three-dimensionally confined microcavity lasers were fabricated by electron beam exposure and dry chemical etching with lateral sizes between 1-5 μm. These photonic quantum dot lasers exhibit a well pronounced optical mode spectrum below threshold with a large mode splitting. Above threshold lasing takes place in the fundamental mode with Fourier transform limited line widths. Due to the enhancement of the coupling of the spontaneous emission into the lasing mode a significant reduction of the threshold density was observed by reducing the lateral size in comparison to planar vertical cavity emitting structures

Keywords

III-V semiconductors; etching; gallium arsenide; indium compounds; laser modes; microcavity lasers; quantum well lasers; semiconductor quantum dots; spontaneous emission; surface emitting lasers; AlAs-GaAs; Fourier transform limited linewidths; GaInAs; dry chemical etching; electron beam exposure; fully confined photon state; lateral size; microcavity lasers; mode splitting; photonic quantum dot lasers; spontaneous emission; threshold density; Chemical lasers; Electron optics; Laser excitation; Laser modes; Microcavities; Optical pumping; Pump lasers; Quantum dot lasers; Quantum well lasers; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 1997 IEEE International Symposium on

Conference_Location

San Diego, CA

Print_ISBN

0-7503-0556-8

Type

conf

DOI

10.1109/ISCS.1998.711737

Filename

711737