DocumentCode
2751630
Title
Characterization of GaAs/AlGaAs mid-infrared emitters
Author
Hvozdara, L. ; Heyman, J.N. ; Strasser, G. ; Unterrainer, K. ; Kruck, P. ; Helm, M. ; Gornik, E.
Author_Institution
Inst. fur Festkoperelektronik, Tech. Univ. Wien, Austria
fYear
1997
fDate
8-11 Sep 1997
Firstpage
565
Lastpage
568
Abstract
We report the design, growth, and characterization of mid-infrared emitters based on the GaAs/AlGaAs material system. The structures are unipolar intersubband emitters. Photocurrent, transmission and integral emission power measurements are performed. We also report the temperature dependence of the photocurrent and current voltage characteristics of two emitters
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; photoconductivity; quantum well lasers; semiconductor epitaxial layers; GaAs-AlGaAs; current voltage characteristics; emission power; mid-infrared emitters; photocurrent; quantum wells; temperature dependence; unipolar intersubband emitters; Distributed feedback devices; Electrons; Gallium arsenide; Laser feedback; Laser transitions; Optical materials; Photoconductivity; Quantum cascade lasers; Quantum well lasers; Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location
San Diego, CA
Print_ISBN
0-7503-0556-8
Type
conf
DOI
10.1109/ISCS.1998.711740
Filename
711740
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