• DocumentCode
    2752262
  • Title

    Monte Carlo estimation of excess noise factor in thin p+-i-n+ avalanche photodiodes

  • Author

    Ong, D.S. ; Li, K.F. ; Rees, G.J. ; Dunn, G.M. ; David, J.P.R. ; Robson, P.N.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Sheffield Univ., UK
  • fYear
    1997
  • fDate
    8-11 Sep 1997
  • Firstpage
    631
  • Lastpage
    634
  • Abstract
    A Monte Carlo model has been used to estimate the excess noise factor in thin p+-i-n+ GaAs avalanche photodiodes. The model predicts a decrease in excess noise factor as the multiplication length decreases from 1.0 to 0.05 μm in good agreement with recent experimental measurements. Our simulations suggest that electron initiated multiplication in short devices has inherently reduced noise despite higher feedback from hole ionization, as compared to long devices. This low noise behaviour in short devices is explained from the ionization path length distribution
  • Keywords
    Monte Carlo methods; avalanche photodiodes; p-i-n photodiodes; semiconductor device models; semiconductor device noise; 1.0 to 0.05 mum; Monte Carlo estimation; Monte Carlo model; electron initiated multiplication; excess noise factor; feedback; hole ionization; ionization path length distribution; low noise behaviour; multiplication length; short devices; thin p+-i-n+ avalanche photodiodes; Avalanche photodiodes; Charge carrier processes; Feedback; Gallium arsenide; Ionization; Length measurement; Monte Carlo methods; Noise measurement; Noise reduction; Predictive models;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductors, 1997 IEEE International Symposium on
  • Conference_Location
    San Diego, CA
  • Print_ISBN
    0-7503-0556-8
  • Type

    conf

  • DOI
    10.1109/ISCS.1998.711756
  • Filename
    711756
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2752262