DocumentCode
2752272
Title
Recent progress in InGaN-based laser diodes fabricated on nonpolar/semipolar substrates
Author
Raring, J.W. ; Schmidt, M.C. ; Poblenz, C. ; Lin, Y. ; Bai, C. ; Rudy, P. ; Speck, J.S. ; DenBaars, S.P. ; Nakamura, S.
Author_Institution
Soraa Inc., Freemont, CA, USA
fYear
2011
fDate
9-13 Oct. 2011
Firstpage
503
Lastpage
504
Abstract
We report recent progress for InGaN-based lasers diodes fabricated on nonpolar/semipolar substrates. We demonstrate single-mode green lasers operating with >;3.5% wall-plug-efficiency and 100mW output power. In the blue regime we demonstrate single-mode lasers with >;23% wall-plug-efficiency and high power lasers with >;1.4W of output power.
Keywords
III-V semiconductors; gallium compounds; indium compounds; optical fabrication; semiconductor lasers; InGaN; laser diodes; nonpolar substrates; power 1.4 W; power 100 mW; semipolar substrates; single-mode green lasers; Diode lasers; Gallium nitride; Power generation; Semiconductor lasers; Substrates; Temperature; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (PHO), 2011 IEEE
Conference_Location
Arlington, VA
Print_ISBN
978-1-4244-8940-4
Type
conf
DOI
10.1109/PHO.2011.6110781
Filename
6110781
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