Two-dimensional device simulation for PHEMT material and process control

Author

Pao, Y.C. ; Harris, J.S., Jr.

Author_Institution

Litton Solid State Div., Santa Clara, CA, USA

fYear

1997

fDate

8-11 Sep 1997

Firstpage

647

Lastpage

650

Abstract

Profound characteristic changes of quarter micron PHEMT as functions of material and process related parameters have been examined based on a novel two-dimensional PISCES heterojunction simulation. The construction of the PHEMT input structure is based on the physical values obtained from experimental measurements. It has been found that gate recess spacing, surface states and buffer are the most influential parameters, other than gate length, 2DEG sheet charge density and saturation velocity, which affect the PHEMT performance

Keywords

carrier density; high electron mobility transistors; semiconductor device models; semiconductor process modelling; surface states; two-dimensional electron gas; 2DEG sheet charge density; PHEMT input structure; PHEMT material; buffer; gate length; gate recess spacing; process control; pseudomorphic HEMT; quarter micron PHEMT; saturation velocity; surface states; two-dimensional PISCES heterojunction simulation; two-dimensional device simulation; Electric breakdown; Electron mobility; HEMTs; Heterojunctions; Impact ionization; MODFETs; PHEMTs; Poisson equations; Process control; Solid state circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 1997 IEEE International Symposium on

Conference_Location

San Diego, CA

Print_ISBN

0-7503-0556-8

Type

conf

DOI

10.1109/ISCS.1998.711760

Filename

711760