Vertical-cavity surface-emitting lasers fabricated with efficient packaging method

Author

Yan, Changling ; Li Xu ; Feng, Yuan ; Hao, Yongqin ; Zhao, Yingjie ; Zhong, Jingchang ; Lu, Guoguang ; Li Qin

Author_Institution

Nat. Key Lab. on High Power Semicond. Lasers, Changchun Univ. of Sci. & Technol., Changchun, China

fYear

2010

fDate

July 28 2010-Aug. 1 2010

Firstpage

87

Lastpage

89

Abstract

Vertical cavity surface emitting lasers with large aperture were fabricated by using wet oxidation technique at about 420°C, and the device chips were packaged with three different packaging methods. The optical output power and wavelength shift of the devices were compared experimentally. The device bonded with diamond spreader shows the best performance, and 200μm-diameter device produces a room temperature continuous wave optical output power of 0.51W. The devices with larger aperture size were also fabricated in experiment.

Keywords

bonding processes; optical fabrication; oxidation; packaging; surface emitting lasers; aperture size; bonding methods; device chips; diamond spreader; optical output power; packaging method; power 0.51 W; size 200 mum; temperature 293 K to 298 K; vertical cavity surface emitting lasers; wavelength shift; wet oxidation technique; Diamond-like carbon; Oxidation; Packaging; Power generation; Temperature measurement; Vertical cavity surface emitting lasers; high power semiconductor lasers; oxidation technique; packaging method; vertical-cavity surface-emitting lasers (VCSELs); wavelength shift;

fLanguage

English

Publisher

ieee

Conference_Titel

Laser Physics and Laser Technologies (RCSLPLT) and 2010 Academic Symposium on Optoelectronics Technology (ASOT), 2010 10th Russian-Chinese Symposium on

Conference_Location

Harbin

Print_ISBN

978-1-4244-5511-9

Type

conf

DOI

10.1109/RCSLPLT.2010.5615396

Filename

5615396