Simulation of two-dimensional etch profile of silicon during orientation-dependent anisotropic etching

Author

Koide, Akira ; Sato, Kazuo ; Tanaka, Shinji

Author_Institution

Hitachi Ltd., Tokyo, Japan

fYear

1991

fDate

30 Jan-2 Feb 1991

Firstpage

216

Lastpage

220

Abstract

A program for the simulation of two-dimensional anisotropic etching profiles has been developed for application to the design of fabrication processes for micromechanical silicon devices. Using this program, it is possible to predict changes in the cross-sectional shape of a silicon wafer having arbitrary crystallographic orientation and an initial cross-sectional shape including concave and convex edges. The data base covers the etching temperature range from 40°C to 78°C using a 40% KOH aqueous solution as an etchant. The program calculates the etch profiles step by step with a time increment on a desktop computer

Keywords

digital simulation; elemental semiconductors; etching; micromechanical devices; silicon; 40 to 78 degC; KOH aqueous solution; Si; concave edges; convex edges; cross-sectional shape; crystallographic orientation; desktop computer; etching temperature; fabrication processes; micromechanical devices; orientation-dependent anisotropic etching; time increment; two-dimensional etch profile; Anisotropic magnetoresistance; Application software; Chemical sensors; Crystallography; Etching; Mechanical variables measurement; Micromechanical devices; Shape; Silicon devices; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 1991, MEMS '91, Proceedings. An Investigation of Micro Structures, Sensors, Actuators, Machines and Robots. IEEE

Conference_Location

Nara

Print_ISBN

0-87942-641-1

Type

conf

DOI

10.1109/MEMSYS.1991.114799

Filename

114799