DocumentCode
2755197
Title
Design and simulation of a wideband CMOS transconductance amplifier
Author
Elazab, M. Abdelfattah
Author_Institution
Higher Technol. Inst., Ramadan Tenth, Egypt
fYear
1999
fDate
23-25 Feb 1999
Abstract
A CMOS wideband transconductance amplifier has been designed in 1.2 μm technology. The output current driving capabilities as well as the frequency response have been simulated using Monte Carlo analysis in order to investigate the effect of dispersion in process parameters. The control over the amplifier bandwidth is obtained by adequate design of the main biasing current. Finally, the transfer characteristic curve nonlinearity is also studied
Keywords
CMOS analogue integrated circuits; Monte Carlo methods; circuit simulation; frequency response; integrated circuit design; linear network analysis; wideband amplifiers; 1.2 micron; 400 MHz; Monte Carlo analysis; SPICE; amplifier bandwidth; biasing current; frequency response; output current driving capabilities; process parameters dispersion; simulation; transfer characteristic curve nonlinearity; wideband CMOS transconductance amplifier; Analytical models; Bandwidth; Broadband amplifiers; CMOS technology; Circuit analysis; Differential amplifiers; Frequency response; Mirrors; Transconductance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Science Conference, 1999. NRSC '99. Proceedings of the Sixteenth National
Conference_Location
Cairo
Print_ISBN
977-5031-62-1
Type
conf
DOI
10.1109/NRSC.1999.760934
Filename
760934
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