DocumentCode
2757472
Title
Photonic crystal defect microcavities with indium arsenide quantum dots
Author
Yoshie ; Painter, Oskar ; Scherer, Axel ; Huffaker, Diana ; Deppe, Dennis
Author_Institution
Dept. of Electr. Eng., California Inst. of Technol., Pasadena, CA, USA
Volume
2
fYear
2000
fDate
2000
Firstpage
415
Abstract
The coupling of InAs QDs emission to the two dimensional photonic crystal defect cavity has been demonstrated for the first time and a narrow filtered emission linewidth could be observed. We describe the emission from 2D photonic crystals that contain an InAs QDs active layer. The epitaxial layers were grown on (001) GaAs by molecular beam epitaxy
Keywords
III-V semiconductors; indium compounds; micro-optics; micromechanical resonators; molecular beam epitaxial growth; photonic band gap; semiconductor quantum dots; (001) GaAs; 2D photonic crystals; GaAs; InAs; InAs QDs active layer; InAs QDs emission; epitaxial layers; indium arsenide quantum dots; molecular beam epitaxy; narrow filtered emission linewidth; photonic crystal defect microcavities; Anisotropic magnetoresistance; Etching; Indium; Microcavities; Optical pumping; Photonic crystals; Quantum dots; Resonance; Superlattices; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE
Conference_Location
Rio Grande
ISSN
1092-8081
Print_ISBN
0-7803-5947-X
Type
conf
DOI
10.1109/LEOS.2000.893889
Filename
893889
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