SiGe HBT power amplifier with distortion-controllable bias circuit and its application to 802.11g wireless LANs

Author

Oka, Tohru ; Hirata, Michitoshi ; Ishimaru, Yoshiteru ; Kawamura, Hiroshi ; Sakuno, Keiichi

Author_Institution

Sharp Corp., Nara

fYear

2006

fDate

12-15 Dec. 2006

Firstpage

133

Lastpage

136

Abstract

This paper describes a SiGe HBT power amplifier with distortion-controllable bias circuits. MOSFETs employed in the bias circuits enable us to control the distortion of power amplifiers by adjusting the gate voltages. The power amplifier MMIC for 802.11lg wireless LANs fabricated using the technique exhibited excellent linearity and efficiency: a linear output power of 18.3 dBm and a power-added efficiency of 16% were achieved at an EVM of 3%, measured with 54 Mbps 64-QAM OFDM signals at 2.45 GHz.

Keywords

Ge-Si alloys; MMIC power amplifiers; bipolar MMIC; wireless LAN; 64-QAM OFDM signals; 802.11g wireless LAN; GeSi; HBT power amplifier; MMIC power amplifier; bit rate 54 Mbit/s; distortion-controllable bias circuit; efficiency 16 percent; frequency 2.4 GHz; Circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Linearity; MMICs; MOSFETs; Power amplifiers; Silicon germanium; Voltage control; Wireless LAN; HBT; SiGe; bias circuit; distortion; linearity; power amplifier; wireless LAN;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2006. APMC 2006. Asia-Pacific

Conference_Location

Yokohama

Print_ISBN

978-4-902339-08-6

Electronic_ISBN

978-4-902339-11-6

Type

conf

DOI

10.1109/APMC.2006.4429393

Filename

4429393