High performance LNA in 0.35 um SiGe RF transceiver one chip for cellular applications

Author

Ahn, Kwang-Ho ; Keum, Dong-Jin ; Rhyu, In-Hyo ; Kim, Hyun-seok ; Jeon, Yu-Beum ; Yoo, Hwa-Yul ; Han, Joo-Young ; Baek, Joon-Hyun

Author_Institution

Wireless Components & Telecommun. Res. Centerand Korea Electron. Technol. Inst., Gyeonggi-Do

fYear

2006

fDate

12-15 Dec. 2006

Firstpage

189

Lastpage

194

Abstract

This paper describes the design and test results of a high performance low noise amplifier (LNA) for code division multiple access (CDMA) one chip transceiver integrated circuit (IC). The circuits are implemented in a standard 0.35-um Samsung Si/Ge BiCMOS process. The LNA has 4 step forward gain control of 15.8 dB, 4 dB, -7.5 dB, and -21 dB. The measured performance of the proposed LNA at the maximum gain stage shows the noise figure of 1.15 dB and the input 3rd order intercept point (IIP3) of 11 dBin, respectively.

Keywords

BiCMOS integrated circuits; cellular radio; code division multiple access; low noise amplifiers; transceivers; BiCMOS process; SiGe; SiGe RF transceiver one chip; cellular applications; code division multiple access; high performance LNA; input 3rd order intercept point; low noise amplifier; one chip transceiver integrated circuit; Circuit testing; Germanium silicon alloys; Integrated circuit noise; Integrated circuit testing; Low-noise amplifiers; Multiaccess communication; Radio frequency; Radiofrequency amplifiers; Silicon germanium; Transceivers; BiCMOS; CDMA; LNA; SiGe; cellular; linearity; noise figure; transceiver;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2006. APMC 2006. Asia-Pacific

Conference_Location

Yokohama

Print_ISBN

978-4-902339-08-6

Electronic_ISBN

978-4-902339-11-6

Type

conf

DOI

10.1109/APMC.2006.4429406

Filename

4429406